Differences

This shows you the differences between two versions of the page.

Link to this comparison view

Both sides previous revision Previous revision
Next revision		 Previous revision
electrical_engineering_and_electronics_2:block11 [2026/06/02 00:54] – mexleadminelectrical_engineering_and_electronics_2:block11 [2026/06/10 03:08] (current) – mexleadmin
Line 18: Line 18:
 \] \]
 at a qualitative level. at a qualitative level.
-  * calculate simple diode operating points with a series resistor. 
-  * identify basic diode types such as universal diodes, Z-diodes, and LEDs. 
 </callout> </callout>
  
Line 78: Line 76:
  
 ===== Core content ===== ===== Core content =====
- 
-<callout> A nice introduction to the bipolar transistor can be found in [[http://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules_(Materials_Science)/Materials_and_Devices/Bipolar_Junction_Transistor|libretexts]]. Some of the following passages, videos and pictures are taken from this introduction. </callout> 
  
 <WRAP><callout type="info" icon="true"> <WRAP><callout type="info" icon="true">
Line 112: Line 108:
 <WRAP> <WRAP>
 <panel type="default"> <panel type="default">
-<imgcaption sep_Res|sepcific resistance for selected conductors, semiconductors, and insulators.></imgcaption>+<imgcaption sep_Res|specific resistance for selected conductors, semiconductors, and insulators.></imgcaption>
 {{drawio>block11_specResistanceV02.svg}} {{drawio>block11_specResistanceV02.svg}}
 </panel> </panel>
Line 407: Line 403:
 ^ Symbol ^ Meaning ^ ^ Symbol ^ Meaning ^
 | \(I_{\rm S}(T)\) | reverse saturation current, strongly temperature-dependent  | | \(I_{\rm S}(T)\) | reverse saturation current, strongly temperature-dependent  |
-| \(m\) | emission coefficient, typically \(1\ldots 2\)  |+| \(m\) | emission coefficient, typically \(1\ldots 2\), material constant  |
 | \(U_{\rm T}\) | thermal voltage ($U_{\rm T}\approx 26~{\rm mV}$ at room temperature)  | | \(U_{\rm T}\) | thermal voltage ($U_{\rm T}\approx 26~{\rm mV}$ at room temperature)  |
 | \(k\) | Boltzmann constant  | | \(k\) | Boltzmann constant  |
Line 576: Line 572:
 \[ \[
 \begin{align*} \begin{align*}
-U_{\rm E}=5.0~{\rm V},+U_{\rm I}=5.0~{\rm V},
 \qquad \qquad
 R=1.0~{\rm k}\Omega. R=1.0~{\rm k}\Omega.
Line 600: Line 596:
 U_R U_R
 = =
-U_{\rm E}-U_{\rm D}+U_{\rm I}-U_{\rm D}
 = =
 5.0~{\rm V}-0.7~{\rm V} 5.0~{\rm V}-0.7~{\rm V}
Line 685: Line 681:
 \[ \[
 \begin{align*} \begin{align*}
-U_{\rm E}=12~{\rm V},+U_{\rm I}=12~{\rm V},
 \qquad \qquad
 R=560~\Omega. R=560~\Omega.
Line 723: Line 719:
 \[ \[
 \begin{align*} \begin{align*}
-U_{\rm E}+U_{\rm I}
 = =
 RI_{\rm D} RI_{\rm D}
Line 735: Line 731:
 \[ \[
 \begin{align*} \begin{align*}
-U_{\rm E}+U_{\rm I}
 = =
 RI_{\rm D} RI_{\rm D}
Line 751: Line 747:
 I_{\rm D} I_{\rm D}
 = =
-\frac{U_{\rm E}-U_{\rm TO}}{R+r_{\rm F}}.+\frac{U_{\rm I}-U_{\rm TO}}{R+r_{\rm F}}.
 \end{align*} \end{align*}
 \] \]
Line 835: Line 831:
  
 ===== Embedded resources ===== ===== Embedded resources =====
- 
-<WRAP group> 
-<WRAP column half> 
-<panel type="info" title="PhET: Semiconductors"> 
-Use this simulation to explore doping and the formation of a diode. 
- 
-{{url>https://phet.colorado.edu/en/simulations/semiconductor 700,500 noborder}} 
-</panel> 
-</WRAP> 
- 
-<WRAP column half> 
-<panel type="info" title="Falstad: Diode I/V curve"> 
-Use this simulation to compare a resistor characteristic with the nonlinear diode characteristic. 
- 
-{{url>https://www.falstad.com/circuit/e-diodecurve.html 700,500 noborder}} 
-</panel> 
-</WRAP> 
-</WRAP> 
  
 ~~PAGEBREAK~~ ~~CLEARFIX~~ ~~PAGEBREAK~~ ~~CLEARFIX~~