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electrical_engineering_and_electronics_2:block13 [2026/06/09 05:19] – mexleadminelectrical_engineering_and_electronics_2:block13 [2026/06/09 05:22] (current) – mexleadmin
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-TBD 
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-  - Semiconductor components \\ (approx. 4 blocks, based on previous lectures on [[circuit_design:2_diodes|Diodes]] and [[circuit_design:2_transistors|Transistors]] ) 
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-    - Bipolar transistor (structure, designations, characteristic curve, characteristic values) 
-    - Transistor as a switch (circuit, switching times and behavior) 
-    - MOSFET (structure, comparison with bipolar transistor) 
-    - Optional: Transistor as an amplifier 
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 <callout> A nice introduction to the bipolar transistor can be found in [[http://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules_(Materials_Science)/Materials_and_Devices/Bipolar_Junction_Transistor|libretexts]]. Some of the following passages, videos and pictures are taken from this introduction. </callout> <callout> A nice introduction to the bipolar transistor can be found in [[http://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules_(Materials_Science)/Materials_and_Devices/Bipolar_Junction_Transistor|libretexts]]. Some of the following passages, videos and pictures are taken from this introduction. </callout>
  
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 \\  \\ 
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 +<WRAP><imgcaption picP|Function of the MOSFET>
 +{{elektronische_schaltungstechnik:mosfet-front-final-test_jpg_project-body.jpg?400}}
 +</imgcaption></WRAP>
 +
 A MOSFET has several operating regions. \\ A MOSFET has several operating regions. \\
 Their names can be confusing because they are not identical to the BJT names. Their names can be confusing because they are not identical to the BJT names.
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 <tabcaption tab_mosfet_types|Basic MOSFET types> <tabcaption tab_mosfet_types|Basic MOSFET types>
  
-^ Channel type ^ Enhancement type / self-blocking ^ Depletion type / self-conducting ^ +^ Channel type  ^ Enhancement type / self-blocking  ^ Depletion type / self-conducting  ^ 
-| n-channel | off at \(U_{\rm GS}=0\), on for sufficiently positive \(U_{\rm GS}\) | on at \(U_{\rm GS}=0\), can be reduced by negative \(U_{\rm GS}\) | +| n-channel  | off at \(U_{\rm GS}=0\), on for sufficiently positive \(U_{\rm GS}\)  | on at \(U_{\rm GS}=0\), can be reduced by negative \(U_{\rm GS}\)  | 
-| p-channel | off at \(U_{\rm GS}=0\), on for sufficiently negative \(U_{\rm GS}\) | on at \(U_{\rm GS}=0\), can be reduced by positive \(U_{\rm GS}\) |+| p-channel  | off at \(U_{\rm GS}=0\), on for sufficiently negative \(U_{\rm GS}\)  | on at \(U_{\rm GS}=0\), can be reduced by positive \(U_{\rm GS}\)  |
 </tabcaption> </tabcaption>
 +\\ 
 In many mechatronic power circuits, the most common device is the **n-channel enhancement MOSFET**. In many mechatronic power circuits, the most common device is the **n-channel enhancement MOSFET**.
  
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 <callout type="warning" icon="true"> <callout type="warning" icon="true">
 MOSFET gates are sensitive.   MOSFET gates are sensitive.  
-A too large \(|U_{\rm GS}|\) can destroy the thin gate oxide.+A too large \(|U_{\rm GS}|\) can destroy the thin gate oxide. \\
 </callout> </callout>